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2SK2515

Features: • Super Low On-Resistance R DS (on)1 = 9 m (VGS = 10 V, ID = 25 A) R DS (on)2 = 14 m (VGS = 4 V, ID = 25 A)• Low Ciss Ciss = 3 400 pF TYP.• Built-in G-S Protection DiodeSpecificationsDrain to Source Voltage VDSS ............................60 VGate to Source Voltage VGS...

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SeekIC No. : 004226164 Detail

2SK2515: Features: • Super Low On-Resistance R DS (on)1 = 9 m (VGS = 10 V, ID = 25 A) R DS (on)2 = 14 m (VGS = 4 V, ID = 25 A)• Low Ciss Ciss = 3 400 pF TYP.• Built-in G-S Protection DiodeS...

2SK2515 Data Sheet

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Part Number:
2SK2515
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/12

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Product Details

Description



Features:

• Super Low On-Resistance
   R DS (on)1 = 9 m (VGS = 10 V, ID = 25 A)
   R DS (on)2 = 14 m (VGS = 4 V, ID = 25 A)
• Low Ciss Ciss = 3 400 pF TYP.
• Built-in G-S Protection Diode


Specifications

Drain to Source Voltage VDSS ............................60 V
Gate to Source Voltage VGSS  ...........................±20 V
Drain Current (DC) ID (DC)   ............................±50 A
Drain Current (pulse)* ID (pulse) .........................±200 A
Total Power Dissipation (Tc = 25 °C) PT1 .....................150 W
Total Power Dissipation (TA = 25 °C) PT2  .....................3.0 W
Channel Temperature Tch   ............................150 °C
Storage Temperature Tstg   .......................55 to +150 °C
* PW 10 s, Duty Cycle 1 %


Description

The 2SK2515 is N-Channel MOS Field Effect Transistor designed for high current switching applications.


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