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2SK2512

Features: • Low On-Resistance R DS (on)1 = 15 mW (VGS = 10 V, ID = 23 A) R DS (on)2 = 23 mW (VGS = 4 V, ID = 23 A)• Low Ciss Ciss = 2 100 pF TYP.• Built-in G-S Protection DiodeSpecificationsDrain to Source Voltage VDSS ..........................60 VGate to Source Voltage VGSS.......

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SeekIC No. : 004226160 Detail

2SK2512: Features: • Low On-Resistance R DS (on)1 = 15 mW (VGS = 10 V, ID = 23 A) R DS (on)2 = 23 mW (VGS = 4 V, ID = 23 A)• Low Ciss Ciss = 2 100 pF TYP.• Built-in G-S Protection DiodeSpec...

2SK2512 Data Sheet

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Part Number:
2SK2512
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• Low On-Resistance
   R DS (on)1 = 15 mW (VGS = 10 V, ID = 23 A)
   R DS (on)2 = 23 mW (VGS = 4 V, ID = 23 A)
• Low Ciss  Ciss = 2 100 pF TYP.
• Built-in G-S Protection Diode


Specifications

Drain to Source Voltage VDSS  ..........................60 V
Gate to Source Voltage VGSS..........................±20 V
Drain Current (DC) ID(DC)     ..........................±45 A
Drain Current (pulse)* I D(pulse)     ......................±180 A
Total Power Dissipation (Tc = 25 °C) PT1 ....................35 W
Total Power Dissipation (TA = 25 °C) PT2  ...................2.0 W
Channel Temperature Tch   ..........................150 °C
Storage Temperature Tstg   .....................55 to +150 °C

* PW 10 s, Duty Cycle 1 %


Description

The 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications.


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