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2SK2510

Features: • Super Low On-Resistance R DS (on)1 = 20 m (VGS = 10 V, ID = 20 A) R DS (on)2 = 30 m (VGS = 4 V, ID = 20 A)• Low Ciss Ciss = 1 600 pF TYP.• Built-in G-S Protection DiodeSpecificationsDrain to Source Voltage VDSS.............................. 60 VGate to Source Voltage ...

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SeekIC No. : 004226158 Detail

2SK2510: Features: • Super Low On-Resistance R DS (on)1 = 20 m (VGS = 10 V, ID = 20 A) R DS (on)2 = 30 m (VGS = 4 V, ID = 20 A)• Low Ciss Ciss = 1 600 pF TYP.• Built-in G-S Protection Diode...

2SK2510 Data Sheet

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Part Number:
2SK2510
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Super Low On-Resistance
   R DS (on)1 = 20 m (VGS = 10 V, ID = 20 A)
   R DS (on)2 = 30 m (VGS = 4 V, ID = 20 A)
• Low Ciss   Ciss = 1 600 pF TYP.
• Built-in G-S Protection Diode


Specifications

Drain to Source Voltage VDSS.............................. 60 V
Gate to Source Voltage VGSS  .............................±20 V
Drain Current (DC) ID(DC)   .............................. ±40 A
Drain Current (pulse)* ID(pulse) ........................... ±160 A
Total Power Dissipation (Tc = 25 °C) PT1  ....................... 35 W
Total Power Dissipation (TA = 25 °C) PT2 ....................... 2.0 W
Channel Temperature Tch   ..............................150 °C
Storage Temperature Tstg   .........................55 to +150 °C


* PW 10 s, Duty Cycle 1 %


Description

The 2SK2510 is N-Channel MOS Field Effect Transistor designed for high current switching applications.


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