2SK2508

The 2SK2508 is a kind of field effect transistor. It is silicon N channel MOS type. The 2SK2508 is designed for high speed, high current switching applications as well as switching regulator, DC-DC converter and motor drive applications. There are some features as follows: (1)low drain-source ON resistance: RDS(ON)=0.18 (typ); (2)high forward transfer admittance: |Yfs|=13 S (typ); (3)low leakage current: IDSS=100A (max) (VDS=250 V); (4)enhancement-mode: Vth=1.5 to 3.5 V (VDS=10 V, ID=1 mA).

What comes next is the maximum ratings of 2SK2508 (Ta=25): (1)drain-source voltage, VDSS: 250 V; (2)drain-gate voltage (RGS=20 k), VDGR: 250 V; (3)gate-source voltage, VGSS: ±20 V; (4)drain current, ID: 13 A when DC and 52 A when pulse; (5)drain power dissipation (Tc=25), PD: 45 W; (6)single pulse avalanche energy, EAS: 148 mJ; (7)avalanche current, IAR: 13 A; (8)repetitive avalanche energy, EAR: 4.5 mJ; (9)channel temperature, Tch: 150; (10)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SK2508(Ta=25): (1)gate leakage current, IGSS: ±10 A at VGS=±16 V, VDS=0 V; (2)drain cut-off current, IDSS: 100A max at VDS=250 V, VGS=0 V; (3)drain-source breakdown voltage, V(BR)DSS: 250 V min at ID=10 mA, VGS=0 V; (4)gate threshold voltage, Vth: 1.5 V min and 3.5 V max at VDS=10 V, ID=1 mA; (5)drain-source ON resistance, RDS(ON): 0.18 typ and 0.25 max at ID=6.5 A, VGS=10 V; (6)forward transfer admittance, |Yfs|: 6 S min and 13 S typ at VDS=10 V, ID=6.5 A; (7)input capacitance, Ciss: 1800 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (8)reverse transfer capacitance, Crss: 130 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (9)output capacitance, Coss: 500 pF typ at VDS=10 V, VGS=0 V, f=1 MHz.