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2SK2498

Features: • Super Low On-State Resistance R DS (on)1 9 m(VGS = 10 V, ID = 25 A) R DS (on)2 14 m (VGS = 4 V, ID = 25 A)• Low Ciss Ciss = 3400 pF TYP.• High Avalanche Capability Ratings• Isolate TO-220 Package• Buit-in G-S Protection DiodeSpecificationsDrain to Source V...

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SeekIC No. : 004226150 Detail

2SK2498: Features: • Super Low On-State Resistance R DS (on)1 9 m(VGS = 10 V, ID = 25 A) R DS (on)2 14 m (VGS = 4 V, ID = 25 A)• Low Ciss Ciss = 3400 pF TYP.• High Avalanche Capability Rati...

2SK2498 Data Sheet

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Part Number:
2SK2498
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/12

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Product Details

Description



Features:

• Super Low On-State Resistance
   R DS (on)1 9 m(VGS = 10 V, ID = 25 A)
   R DS (on)2 14 m (VGS = 4 V, ID = 25 A)
• Low Ciss Ciss = 3400 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package
• Buit-in G-S Protection Diode


Specifications

Drain to Source Voltage VDSS ................................60 V
Gate to Source Voltage VGSS ............................... ±20 V
Drain Current (DC) ID(DC) .................................±50 A
Drain Current (pulse)* ID(pulse) ............................. ±200 A
Total Power Dissipation (Tc = 25 °C) PT .........................1 35 W
Total Power Dissipation (TA = 25 °C) PT.........................2 2.0 W
Channel Temperature Tch ................................150 °C
Storage Temperature Tstg..........................    55 to +150 °C
Single Avalanche Current** IAS ...............................50 A
Single Avalanche Energy** EAS ..............................250 mJ

* PW 10 ms, Duty Cycle 1 %
** Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0


Description

2SK2498 is N-Channel MOS Field Effect Transistor designed for high current switching applications.


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