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2SK2486

Features: • Low On-Resistance R DS (on) = 2.0 (VGS = 10 V, ID = 4.0 A)• Low Ciss Ciss = 1 830 pF TYP.• High Avalanche Capability RatingsSpecificationsDrain to Source Voltage VDSS.............................. 900 VGate to Source Voltage VGSS ..............................±30 VDra...

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SeekIC No. : 004226142 Detail

2SK2486: Features: • Low On-Resistance R DS (on) = 2.0 (VGS = 10 V, ID = 4.0 A)• Low Ciss Ciss = 1 830 pF TYP.• High Avalanche Capability RatingsSpecificationsDrain to Source Voltage VDSS.....

2SK2486 Data Sheet

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Part Number:
2SK2486
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low On-Resistance
   R DS (on) = 2.0  (VGS = 10 V, ID = 4.0 A)
• Low Ciss  Ciss = 1 830 pF TYP.
• High Avalanche Capability Ratings


Specifications

Drain to Source Voltage VDSS.............................. 900 V
Gate to Source Voltage VGSS ..............................±30 V
Drain Current (DC) ID (DC) ...............................±7.0 A
Drain Current (pulse)* ID (pulse)  ............................±18 A
Total Power Dissipation (Tc = 25 °C) PT1  ....................... 120 W
Total Power Dissipation (TA = 25 °C) PT2 ........................3.0 W
Channel Temperature Tch  ...............................150 °C
Storage Temperature Tstg  ..........................55 to +150 °C
Single Avalanche Current** IAS   .............................7.0 A
Single Avalanche Energy** EAS   ........................... 144.1 mJ

* PW 10 s, Duty Cycle 1 %
** Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0


Description

The 2SK2486 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.


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