2SK2485

The 2SK2485 is designed as one kind of N-channel MOS field effect transistor that can be used in high voltage switching applications. Features of this device are:(1)low on-resistance:RDS (on)=2.8 W (VGS=10 V, ID=3.0 A);(2)low ciss ciss = 1200 pF typ.;(3)high avalanche capability ratings.

The absolute maximum ratings of the 2SK2485 can be summarized as:(1)drain to source voltage:900 V;(2)gate to source voltage:±30 V;(3)drain current (DC):±6.0 A;(4)drain current (pulse):±12 A;(5)total power dissipation (Tc=25 °C):100 W;(6)total power dissipation (TA=25 °C):3.0 W;(7)channel tempera-ture:150 °C;(8)storage temperature:55 to +150 °C;(9)single avalanche current:6.0 A;(10)singleavalanche energy:42.3 mJ.

And the electrical characteristics (TA=25 °C) of the 2SK2485 can be summarized as:(1)drain to source on-resistance: 2.2 ;(2)gate to source cutoff voltage: 2.5 V to 3.5 V(3)forward transfer admittance:2.0 S;(4)drain leakage current: 100 A;(5)gate to source leakage current: +/-100 nA;(6)input capacitance:1200 pF;(7)output capacitance:170 pF;(8)reverse transfer capacitance:30 pF;(9)turn-on delay time:20 ns;(10)rise time: 10 ns. If you want to know more information such as the electrical characteristics about the 2SK2485, please download the datasheet in www.seekic.com or www.chinaicmart.com.