2SK2484

Features: • Low On-Resistance R DS(on) = 2.8 (VGS = 10 V, ID = 3.0 A)• Low Ciss Ciss = 1 200 pF TYP.• High Avalanche Capability RatingsSpecificationsDrain to Source Voltage VDSS .............................900 VGate to Source Voltage VGSS............................. ±30 VDrain ...

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2SK2484 Picture
SeekIC No. : 004226140 Detail

2SK2484: Features: • Low On-Resistance R DS(on) = 2.8 (VGS = 10 V, ID = 3.0 A)• Low Ciss Ciss = 1 200 pF TYP.• High Avalanche Capability RatingsSpecificationsDrain to Source Voltage VDSS .....

floor Price/Ceiling Price

Part Number:
2SK2484
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/24

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Product Details

Description



Features:

• Low On-Resistance
   R DS(on) = 2.8  (VGS = 10 V, ID = 3.0 A)
• Low Ciss  Ciss = 1 200 pF TYP.
• High Avalanche Capability Ratings



Specifications

Drain to Source Voltage VDSS .............................900 V
Gate to Source Voltage VGSS............................. ±30 V
Drain Current (DC) I D(DC) ..............................±5.0 A
Drain Current (pulse)* I D(pulse)  ...........................±10 A
Total Power Dissipation (Tc = 25 °C) PT1  .......................75 W
Total Power Dissipation (TA = 25 °C) PT2 .......................1.5 W
Channel Temperature Tch  ..............................150 °C
Storage Temperature Tstg  .........................55 to +150 °C
Single Avalanche Current** IAS   ............................5.0 A
Single Avalanche Energy** EAS  ............................75 mJ

* PW 10 s, Duty Cycle 1 %
** Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0



Description

The 2SK2484 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.


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