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2SK2483

Features: • Low On-Resistance R DS (on) = 2.8 (VGS = 10 V, ID = 2.0 A)• Low Ciss Ciss = 1 200 pF TYP.• High Avalanche Capability Ratings• Isolated TO-220 PackageSpecificationsDrain to Source Voltage VDSS ..............................900 VGate to Source Voltage VGSS .........

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SeekIC No. : 004226139 Detail

2SK2483: Features: • Low On-Resistance R DS (on) = 2.8 (VGS = 10 V, ID = 2.0 A)• Low Ciss Ciss = 1 200 pF TYP.• High Avalanche Capability Ratings• Isolated TO-220 PackageSpecificatio...

2SK2483 Data Sheet

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Part Number:
2SK2483
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Low On-Resistance
   R DS (on) = 2.8 (VGS = 10 V, ID = 2.0 A)
• Low Ciss  Ciss = 1 200 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 Package


Specifications

Drain to Source Voltage VDSS ..............................900 V
Gate to Source Voltage VGSS ..............................±30 V
Drain Current (DC) I D(DC) ...............................±3.5 A
Drain Current (pulse)* I D(pulse)  ...........................±10.5 A
Total Power Dissipation (Tc = 25 °C) PT1  ........................40 W
Total Power Dissipation (TA = 25 °C) PT2........................ 2.0 W
Channel Temperature Tch ............................... 150 °C
Storage Temperature Tstg  ..........................55 to +150 °C
Single Avalanche Current** IAS  ............................. 3.5 A
Single Avalanche Energy** EAS............................. 147 mJ

* PW 10 s, Duty Cycle 1 %
** Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0


Description

The 2SK2483 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.


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