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2SK2481

Features: • Low On-Resistance R DS(on) = 4.0 (VGS = 10 V, ID = 2.0 A)• Low Ciss Ciss = 900 pF TYP.• High Avalanche Capability RatingsSpecificationsDrain to Source Voltage VDSS ...........................900 VGate to Source Voltage VGSS........................... ±30 VDrain Curre...

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SeekIC No. : 004226137 Detail

2SK2481: Features: • Low On-Resistance R DS(on) = 4.0 (VGS = 10 V, ID = 2.0 A)• Low Ciss Ciss = 900 pF TYP.• High Avalanche Capability RatingsSpecificationsDrain to Source Voltage VDSS ......

2SK2481 Data Sheet

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Part Number:
2SK2481
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Low On-Resistance
   R DS(on) = 4.0 (VGS = 10 V, ID = 2.0 A)
• Low Ciss  Ciss = 900 pF TYP.
• High Avalanche Capability Ratings


Specifications

Drain to Source Voltage VDSS ...........................900 V
Gate to Source Voltage VGSS........................... ±30 V
Drain Current (DC) I D(DC) ............................±4.0 A
Drain Current (pulse)* I D(pulse)  .........................±12 A
Total Power Dissipation (Tc = 25 °C) PT1 ..................... 70 W
Total Power Dissipation (TA = 25 °C) PT2 .....................1.5 W
Channel Temperature Tch  ............................ 150 °C
Storage Temperature Tstg   .......................55 to +150 °C
Single Avalanche Current** IAS ...........................4.0 A
Single Avalanche Energy** EAS.......................... 65.9 mJ

* PW 10 s, Duty Cycle 1 %
** Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0


Description

The 2SK2481 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.


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