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2SK2480

Features: • Low On-Resistance R DS (on) = 4.0 (VGS = 10 V, ID = 2.0 A)• Low Ciss Ciss = 900 pF TYP.• High Avalanche Capability Ratings• Isolated TO-220 PackageSpecificationsDrain to Source Voltage VDSS ............................900 VGate to Source Voltage VGSS .............

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SeekIC No. : 004226136 Detail

2SK2480: Features: • Low On-Resistance R DS (on) = 4.0 (VGS = 10 V, ID = 2.0 A)• Low Ciss Ciss = 900 pF TYP.• High Avalanche Capability Ratings• Isolated TO-220 PackageSpecifications...

2SK2480 Data Sheet

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Part Number:
2SK2480
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Low On-Resistance
   R DS (on) = 4.0 (VGS = 10 V, ID = 2.0 A)
• Low Ciss  Ciss = 900 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 Package


Specifications

Drain to Source Voltage VDSS ............................900 V
Gate to Source Voltage VGSS ............................±30 V
Drain Current (DC) I D(DC) .............................±3.0 A
Drain Current (pulse)* I D(pulse) ..........................±12 A
Total Power Dissipation (Tc = 25 °C) PT1 ......................35 W
Total Power Dissipation (TA = 25 °C) PT2  ..................... 2.0 W
Channel Temperature Tch .............................150 °C
Storage Temperature Tstg ........................55 to +150 °C
Single Avalanche Current** IAS  ...........................3.0 A
Single Avalanche Energy** EAS.......................... 37.1 mJ

* PW  10 ms, Duty Cycle  1 %
** Starting Tch = 25 °C, RG = 25 , VGS = 20 V  0


Description

The 2SK2480 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.


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