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2SK2477

Features: • Low On-Resistance R DS (on) = 1.0 (VGS = 10 V, ID = 5.0 A)• Low Ciss Ciss = 2 950 pF TYP.• High Avalanche Capability RatingsSpecificationsDrain to Source Voltage VDSS ........................800 VGate to Source Voltage VGSS........................ ±30 VDrain Current (...

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SeekIC No. : 004226133 Detail

2SK2477: Features: • Low On-Resistance R DS (on) = 1.0 (VGS = 10 V, ID = 5.0 A)• Low Ciss Ciss = 2 950 pF TYP.• High Avalanche Capability RatingsSpecificationsDrain to Source Voltage VDSS ....

2SK2477 Data Sheet

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Part Number:
2SK2477
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low On-Resistance
   R DS (on) = 1.0  (VGS = 10 V, ID = 5.0 A)
• Low Ciss  Ciss = 2 950 pF TYP.
• High Avalanche Capability Ratings


Specifications

Drain to Source Voltage VDSS ........................800 V
Gate to Source Voltage VGSS........................ ±30 V
Drain Current (DC) I D (DC) .........................±10 A
Drain Current (pulse)* I D (pulse)......................±30 A
Total Power Dissipation (Tc = 25 °C) PT1  .................150 W
Total Power Dissipation (TA = 25 °C) PT  .................2 3.0 W
Channel Temperature Tch .........................150 °C
Storage Temperature Tstg ....................55 to +150 °C
Single Avalanche Current** IAS   .......................10 A
Single Avalanche Energy** EAS  ...................... 300 mJ

* PW  10 ms, Duty Cycle  1 %
** Starting Tch = 25 °C, RG = 25 , VGS = 20 V  0


Description

The 2SK2477 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.


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