2SK2466

The 2SK2466 is a kind of field effect transistor. It is silicon N channel MOS type. The device is designed for high speed, high current switching applications and chopper regulator, DC-DC converter and motor drive applications. There are some features as follows: (1)low drain-source ON resistance: RDS(ON)=34 m (typ); (2)high forward transfer admittance: |Yfs|=30 S (typ); (3)low leakage current: IDSS=100A (max) (VDS=100 V); (4)enhancement-mode: Vth=0.8 to 2.0 V (VDS=10 V, ID=1 mA); (5)4 V gate drive.

What comes next is the maximum ratings of 2SK2466(Ta=25): (1)drain-source voltage, VDSS: 100 V; (2)drain-gate voltage (RGS=20 k), VDGR: 100 V; (3)gate-source voltage, VGSS: ±20 V; (4)drain current, ID: 30 A when DC and 120 A when pulse; (5)drain power dissipation (Tc=25), PD: 40 W; (6)single pulse avalanche energy, EAS: 293 mJ; (7)avalanche current, IAR: 30 A; (8)repetitive avalanche energy, EAR: 4 mJ; (9)channel temperature, Tch: 150; (10)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SK2466(Ta=25): (1)gate leakage current, IGSS: ±20 A at VGS=±16 V, VDS=0 V; (2)drain cut-off current, IDSS: 100A max at VDS=100 V, VGS=0 V; (3)drain-source breakdown voltage, V(BR)DSS: 100 V min at ID=10 mA, VGS=0 V; (4)gate threshold voltage, Vth: 0.8 V min and 2.0 V max at VDS=10 V, ID=1 mA; (5)drain-source ON resistance, RDS(ON): 40 m typ and 70 m max at ID=15 A, VGS=4 V; 34 m typ and 46 m max at ID=15 A, VGS=10 V; (6)forward transfer admittance, |Yfs|: 13 S min and 30 S typ at VDS=10 V, ID=15 A; (7)input capacitance, Ciss: 3250 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (8)reverse transfer capacitance, Crss: 230 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (9)output capacitance, Coss: 520 pF typ at VDS=10 V, VGS=0 V, f=1 MHz.