2SK2463

Features of the 2SK2463 are:(1)low on-resistance;(2)fast switching speed;(3)wide SOA (safe operating area);(4)low-voltage drive (4V);(5)easily designed drive circuits;(6)easy to parallel.

Structure of the 2SK2463 are:(1)silicon N-channel;(2)MOSFET.

The absolute maximum ratings of the 2SK2463 can be summarized as:(1):the parameter is drain-source voltage,the symbol is VDSS,the limits is 60,the unit is V;(2):the parameter is gate-source voltage,the symbol is VGSS,the limits is ±20,the unit is V;(3):the parameter is drain current continuous,the symbol is ID,the limits is 2,the unit is A;(4):the parameter is drain current pulsed,the symbol is IDP,the limits is 8,the unit is A;(5):the parameter is reverse drain current continuous,the symbol is IDR,the limits is 2,the unit is A;(6):the parameter is reverse drain current pulsed,the symbol is IDRP,the limits is 8,the unit is A;(7):the parameter is total power dissipation,the symbol is PD,the limits is 0.5,the unit is W;(8):the parameter is total power dissipation,the symbol is PD,the limits is 2,the unit is W;(9):the parameter is channel temperature,the symbol is Tch,the limits is 150,the unit is ;(10):the parameter is storage temperature,the symbol is Tstg,the limits is -55 to +150,the unit is .