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2SK2412

Features: • Low On-Resistance - RDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 10 A) - RDS(on)2 = 95 m MAX. (@ VGS = 4 V, ID = 10 A)• Low Ciss Ciss = 860 pF TYP.• Built-in G-S Gate Protection Diodes• High Avalanche Capability RatingsSpecifications Drain to Source Voltage VD...

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SeekIC No. : 004226100 Detail

2SK2412: Features: • Low On-Resistance - RDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 10 A) - RDS(on)2 = 95 m MAX. (@ VGS = 4 V, ID = 10 A)• Low Ciss Ciss = 860 pF TYP.• Built-in G-S Gate Prote...

2SK2412 Data Sheet

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Part Number:
2SK2412
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Low On-Resistance
  - RDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 10 A)
  - RDS(on)2 = 95 m MAX. (@ VGS = 4 V, ID = 10 A)
• Low Ciss Ciss = 860 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings


Specifications

Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±30 A
Drain Current (Pulse) Note1 ID(pulse) ±80 A
Total Power Dissipation (TC = 25°C) PT 30 W
Total Power Dissipation(TA= 25°C) PT 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche CurrentNote2 IAS 20 A
Single Avalanche EnergyNote2 EAS 22.5 mJ

Notes 1. PW 10 s, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V




Description

The 2SK2412 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.


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