2SK241

The 2SK241 is a kind of field effect transistor. It is silicon N channel MOS type. The device is designed for FM tuner, VHF and RF amplifier applications. There are some features as follows: (1)low reverse transfer capacitance: Crss=0.035 pF (typ); (2)low noise figure: NF=1.7 dB (typ); (3)high power gain: GPS=28 dB (typ); (4)recommend operation voltage: 5 to 15 V.

What comes next is the maximum ratings of 2SK241(Ta=25): (1)drain-source voltage, VDS: 20 V; (2)gate-source voltage, VGS: ±5 V; (3)drain current, ID: 30 mA; (4)drain power dissipation (Tc=25), PD: 200 mW; (5)channel temperature, Tch: 125; (6)storage temperature range, Tstg: -55 to 125.

The following is the electrical characteristics of 2SK241(Ta=25): (1)gate leakage current, IGSS: ±50 nA at VGS=±5 V, VDS=0 V; (2)drain cut-off current, IDSS: 1.5 mA min and 14 mA max at VDS=10 V, VGS=0 V; (3)drain-source voltage, VDSX: 20 V min at ID=100A, VGS=-4 V; (4)gate-source cut-off voltage, VGS(OFF): -2.5 V max at VDS=10 V, ID=100A; (5)forward transfer admittance, |Yfs|: 10 mS typ at VDS=10 V, VGS=0, f=1 kHz; (6)input capacitance, Ciss: 3.0 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (7)reverse transfer capacitance, Crss: 0.035 pF typ and 0.050 pF max at VDS=10 V, VGS=0 V, f=1 MHz; (8)output capacitance, Coss: 110 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (9)power gain, Gps: 28 dB typ at VDS=10 V, VGS=0, f=100 MHz; (10)noise figure, NF: 1.7 dB typ and 3.0 dB max at VDS=10 V, VGS=0, f=100 MHz.