2SK241

DescriptionThe 2SK241 is a kind of field effect transistor. It is silicon N channel MOS type. The device is designed for FM tuner, VHF and RF amplifier applications. There are some features as follows: (1)low reverse transfer capacitance: Crss=0.035 pF (typ); (2)low noise figure: NF=1.7 dB (typ); ...

product image

2SK241 Picture
SeekIC No. : 004226096 Detail

2SK241: DescriptionThe 2SK241 is a kind of field effect transistor. It is silicon N channel MOS type. The device is designed for FM tuner, VHF and RF amplifier applications. There are some features as follo...

floor Price/Ceiling Price

Part Number:
2SK241
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/3/10

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Description

The 2SK241 is a kind of field effect transistor. It is silicon N channel MOS type. The device is designed for FM tuner, VHF and RF amplifier applications. There are some features as follows: (1)low reverse transfer capacitance: Crss=0.035 pF (typ); (2)low noise figure: NF=1.7 dB (typ); (3)high power gain: GPS=28 dB (typ); (4)recommend operation voltage: 5 to 15 V.

What comes next is the maximum ratings of 2SK241(Ta=25): (1)drain-source voltage, VDS: 20 V; (2)gate-source voltage, VGS: ±5 V; (3)drain current, ID: 30 mA; (4)drain power dissipation (Tc=25), PD: 200 mW; (5)channel temperature, Tch: 125; (6)storage temperature range, Tstg: -55 to 125.

The following is the electrical characteristics of 2SK241(Ta=25): (1)gate leakage current, IGSS: ±50 nA at VGS=±5 V, VDS=0 V; (2)drain cut-off current, IDSS: 1.5 mA min and 14 mA max at VDS=10 V, VGS=0 V; (3)drain-source voltage, VDSX: 20 V min at ID=100A, VGS=-4 V; (4)gate-source cut-off voltage, VGS(OFF): -2.5 V max at VDS=10 V, ID=100A; (5)forward transfer admittance, |Yfs|: 10 mS typ at VDS=10 V, VGS=0, f=1 kHz; (6)input capacitance, Ciss: 3.0 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (7)reverse transfer capacitance, Crss: 0.035 pF typ and 0.050 pF max at VDS=10 V, VGS=0 V, f=1 MHz; (8)output capacitance, Coss: 110 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (9)power gain, Gps: 28 dB typ at VDS=10 V, VGS=0, f=100 MHz; (10)noise figure, NF: 1.7 dB typ and 3.0 dB max at VDS=10 V, VGS=0, f=100 MHz.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Line Protection, Backups
Semiconductor Modules
Transformers
Optoelectronics
Cables, Wires
View more