2SK2398

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) @ Vds: 1800pF @ 10V
Current - Continuous Drain (Id) @ 25° C: 45A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Power - Max: 100W
Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V
Package / Case: TO-3P-3, SC-65-3
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)


Parameters:

Technical/Catalog Information	2SK2398
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	45A
Rds On (Max) @ Id, Vgs	30 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	1800pF @ 10V
Power - Max	100W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	2-16C1B (TO-247 N)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SK2398 2SK2398