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2SK2381

Application`Low drain−source ON resistance : RDS (ON) = 0.56 (typ.)`High forward transfer admittance : |Yfs| = 4.5 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 200 V)`Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol Rating U...

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SeekIC No. : 004226077 Detail

2SK2381: Application`Low drain−source ON resistance : RDS (ON) = 0.56 (typ.)`High forward transfer admittance : |Yfs| = 4.5 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 200 V)`Enhancement ...

2SK2381 Data Sheet

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Part Number:
2SK2381
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

`Low drain−source ON resistance : RDS (ON) = 0.56 (typ.)
`High forward transfer admittance : |Yfs| = 4.5 S (typ.)
`Low leakage current : IDSS = 100 A (max) (VDS = 200 V)
`Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics Symbol Rating Unit
Drain−source voltage VDSS 200 V
Drain−gate voltage (RGS = 20 k) VDGR 200 V
Gate−source voltage VGSS ±20 V
Drain current DC (Note 1) ID 5 A
Pulse (Note 1) IDP 20 A
Drain power dissipation (Tc = 25°C) PD 25 W
Single pulse avalanche energy
                                             (Note 2)		 EAS 65 mJ
Avalanche current IAR 5 A
Repetitive avalanche energy (Note 3) EAR 2.5 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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