Application`Low drain−source ON resistance : RDS (ON) = 0.56 (typ.)`High forward transfer admittance : |Yfs| = 4.5 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 200 V)`Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol Rating U...
2SK2381: Application`Low drain−source ON resistance : RDS (ON) = 0.56 (typ.)`High forward transfer admittance : |Yfs| = 4.5 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 200 V)`Enhancement ...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Characteristics | Symbol | Rating | Unit | |
Drain−source voltage | VDSS | 200 | V | |
Drain−gate voltage (RGS = 20 k) | VDGR | 200 | V | |
Gate−source voltage | VGSS | ±20 | V | |
Drain current | DC (Note 1) | ID | 5 | A |
Pulse (Note 1) | IDP | 20 | A | |
Drain power dissipation (Tc = 25°C) | PD | 25 | W | |
Single pulse avalanche energy (Note 2) |
EAS | 65 | mJ | |
Avalanche current | IAR | 5 | A | |
Repetitive avalanche energy (Note 3) | EAR | 2.5 | mJ | |
Channel temperature | Tch | 150 | °C | |
Storage temperature range | Tstg | −55~150 | °C |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).