2SK2373

      The 2SK2373 is a Silicon N-Channel MOS FET Transistor designed for Low frequency power switching applications.The 2SK2373 has 5 features including Low on-resistance;Small package; Low drive current;4 V gate drive device can be driven from 5 V source;Suitable for low signal load switch.
      The absolute maximun ratings of the 2SK2373 are at Ta=25°C, Drain to source voltage VDSS is 30V;Gate to source voltage VGSS is ±20V;drain Current ID(DC) is 0.2A;channel dissipation is 150mW;channel temperature is 150°C maxnimum;Storage temperature is -55 to +150°C.
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      The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intels latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible block locking allows any block to be independently locked or unlocked. Add to this the Intel-developed Flash Data Integrator (FDI) software and you have a cost-effective, flexible, monolithic code plus data storage solution on the market today. 3 Volt Advanced+ Boot Block products will be available in 48-lead TSOP, 40-lead TSOP, and 48-ball µBGA* packages.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.
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