2SK2369/2SK2370

     The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.The 2SK2369/2SK2370 has 3 features including Low on-resistance,2SK2369: RDS(on) = 0.35 (VGS = 10 V, ID = 10 A),2SK2370: RDS(on) = 0.4 (VGS = 10 V, ID = 10 A);Low Ciss Ciss = 2400 pF TYP;High Avalanche Capability Ratings
      The absolute maximun ratings of the 2SK2369/2SK2370  are at Ta=25°C, Drain to source voltage(2SK2369/2SK2370 ) VDSS is 450/500V;Gate to source voltage VGSS is ±30V;drain Current ID(DC) is ±8.0A;total power dissipation is 140W;channel temperature is 150°C maxnimum;Storage temperature is -55 to +150°C.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.
      The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
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