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2SK2369

Features: • Low On-Resistance 2SK2369: RDS(on) = 0.35 W (VGS = 10 V, ID = 10 A) 2SK2370: RDS(on) = 0.4 W (VGS = 10 V, ID = 10 A)• Low Ciss Ciss = 2400 pF TYP.• High Avalanche Capability RatingsSpecifications Characteristic Symbol Value Unit Drain to Source Volt...

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SeekIC No. : 004226068 Detail

2SK2369: Features: • Low On-Resistance 2SK2369: RDS(on) = 0.35 W (VGS = 10 V, ID = 10 A) 2SK2370: RDS(on) = 0.4 W (VGS = 10 V, ID = 10 A)• Low Ciss Ciss = 2400 pF TYP.• High Avalanche Capab...

2SK2369 Data Sheet

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Part Number:
2SK2369
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Low On-Resistance
   2SK2369: RDS(on) = 0.35 W (VGS = 10 V, ID = 10 A)
   2SK2370: RDS(on) = 0.4 W (VGS = 10 V, ID = 10 A)
• Low Ciss Ciss = 2400 pF TYP.
• High Avalanche Capability Ratings


Specifications

Characteristic
Symbol
Value
Unit
Drain to Source Voltage(2SAK2369/2370)
VDSS
450/500
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±20
A
Drain Current (pulse)*
ID(pulse)
±80
A
Total Power Dissipation (Tc = 25 °C)
PT1
140
W
Total Power Dissipation (TA = 25 °C)
PT2
3.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current**
IAS
20
A
Single Avalanche Energy**
EAS
285
mJ
* PW 10 ms, Duty Cycle 1 %
** Starting Tch = 25 °C, RG = 25 W, VGS = 20 V    0


Description

The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.


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