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2SK2358_1376647

Features: • Low On-Resistance2SK2357: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 3.0 A)2SK2358: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 3.0 A)• Low Ciss Ciss = 1050 pF TYP.• High Avalanche Capability Ratings• Isolate TO-220 PackageSpecificationsDrain to Source Voltage (2SK2357...

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SeekIC No. : 004226064 Detail

2SK2358_1376647: Features: • Low On-Resistance2SK2357: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 3.0 A)2SK2358: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 3.0 A)• Low Ciss Ciss = 1050 pF TYP.• High Aval...

2SK2358_1376647 Data Sheet

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Part Number:
2SK2358_1376647
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low On-Resistance
2SK2357:  RDS(on) = 0.9 Ω (VGS = 10 V, ID = 3.0 A)
2SK2358:  RDS(on) = 1.0 Ω (VGS = 10 V, ID = 3.0 A)
• Low Ciss     Ciss = 1050 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package


Specifications

Drain to Source Voltage (2SK2357/2358)             VDSS          450/500         V
Gate to Source Voltage                                         VGSS          ±30               V
Drain Current (DC)                                                ID(DC)        ±6.0              A
Drain Current (pulse)*                                          ID(pulse)     ±24               A
Total Power Dissipation (Tc = 25 ˚C)                     PT1             35                 W
Total Power Dissipation (Ta = 25 ˚C)                    PT2              2.0                W
Channel Temperature                                          Tch              150               °C
Storage Temperature                                           Tstg            55 to +150 °C
Single Avalanche Current**                                 IAS               6.0                  A
Single Avalanche Energy**                                  EAS               17                  mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V 0


Description

The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.


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