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2SK2355-Z_1376664

Features: • Low On-Resistance2SK2355: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A)2SK2356: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A)• Low Ciss Ciss = 670 pF TYP.• High Avalanche Capability RatingsApplicationThe 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field E...

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SeekIC No. : 004226063 Detail

2SK2355-Z_1376664: Features: • Low On-Resistance2SK2355: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A)2SK2356: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A)• Low Ciss Ciss = 670 pF TYP.• High Avala...

2SK2355-Z_1376664 Data Sheet

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Part Number:
2SK2355-Z_1376664
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low On-Resistance
2SK2355:  RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A)
2SK2356:  RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A)
• Low Ciss     Ciss = 670 pF TYP.
• High Avalanche Capability Ratings


Application

The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.


Specifications

Drain to Source Voltage (2SK2355/2356)         VDSS       450/500      V
Gate to Source Voltage                                    VGSS        ±30            V
Drain Current (DC)                                           ID(DC)      ±5.0           A
Drain Current (pulse)*                                     ID(pulse)  ±20             A
Total Power Dissipation (Tc = 25 ˚C)                PT1          50               W
Total Power Dissipation (Ta = 25 ˚C)               PT2          1.5               W
Channel Temperature                                     Tch           150             °C
Storage Temperature                                     Tstg        55 to +150 °C
Single Avalanche Current**                            IAS           5.0                 A
Single Avalanche Energy**                             EAS          17.4              mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V 0


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