Features: • Low ON resistance, ultrahigh-speed switching.• High reliability (Adoption of HVP process).Specifications Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1200 V Gate-to-Source Voltage VGSS ±30 V Drai...
2SK2348: Features: • Low ON resistance, ultrahigh-speed switching.• High reliability (Adoption of HVP process).Specifications Parameter Symbol Conditions Ratings Unit Drain-...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Drain-to-Source Voltage |
VDSS |
1200 |
V | |
Gate-to-Source Voltage |
VGSS |
±30 |
V | |
Drain Current (DC) |
ID |
14 |
A | |
Drain Current (pulse) |
IDP |
28 |
A | |
Allowable Power Dissipation |
PD |
PW10s, duty cycle1% |
4.6 |
W |
Tc=25°C |
160 |
W | ||
Channel Temperature |
Tch |
150 |
||
Storage temperature |
Tstg |
55 to +150 |