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2SK2341

Features: • Low On-state Resistance R DS(on) = 0.26 W MAX. (VGS = 10 V, ID = 6.0 A)• LOW Ciss Ciss = 1090 pF TYP.• High Avalanche Capability RatingsSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 250 V Gate to source voltage ...

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SeekIC No. : 004226059 Detail

2SK2341: Features: • Low On-state Resistance R DS(on) = 0.26 W MAX. (VGS = 10 V, ID = 6.0 A)• LOW Ciss Ciss = 1090 pF TYP.• High Avalanche Capability RatingsSpecifications Item S...

2SK2341 Data Sheet

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Part Number:
2SK2341
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low On-state Resistance
    R DS(on) = 0.26 W MAX. (VGS = 10 V, ID = 6.0 A)
• LOW Ciss Ciss = 1090 pF TYP.
• High Avalanche Capability Ratings


Specifications

Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
250
V
Gate to source voltage
VGSS
±30
V
Drain current(DC)
ID(DC)
±11
A
Drain current(pulse)
ID(pulse)*
±44
A
Total Power Dissipation (TC = 25°C)
PT1
35
W
Total Power Dissipation (TA = 25°C)
PT2
2.0
W
Channel Temperature
Tstg
55 to +150
Storage Temperature
Tch
150
Single Avalanche Current
IAS**
11
A
Single Avalanche Energy
EAS**
320
mJ
*PW 10 ms, Duty Cycle 1 %
**Starting Tch = 25 °C, RG = 25 W, VGS = 20 V 0


Description

The 2SK2341 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications.


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