Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Power - Max: 1W
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 2A
Vgs(th) (Max) @ Id: -
Package / Case: TO-243AA
Manufacturer: Renesas Electronics America
Rds On (Max) @ Id, Vgs: 450 mOhm @ 1A, 4V
Input Capacitance (Ciss) @ Vds: 173pF @ 10V
Supplier Device Package: UPAK
DescriptionThe 2SK2315TYTR is belongs to 2SK2315 family. There are some cautions to be taken attentions: products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 2SK2315TYTR is not designed to be radiation resistant.
The features of 2SK2315TYTR can be summarized as (1)low on-resistance; (2)high speed switching; (3)low drive current; (4)2.5 V gate drive device can be driven from 3 V source.; (5)suitable for DC-DC converter, motor drive, power switch, solenoid drive. It can be used in high speed power switching.
The absolute maximum ratings of 2SK2315TYTR are (1)drain to source voltage(VDSS):60 V; (2)gate to source voltage (VGSS):±20 V; (3)drain current (ID):2 A; (4)drain peak current (ID(pulse))(*1: PW 10 ms, duty cycle 1 %):4 A; (5)body to drain diode reverse drain current(IDR):2 A; (6)channel dissipation (Pch*2: When using the alumina ceramic board (125 *20 * 07mm)):1 W; (7)channel temperature(Tch):150°C; (8)storage temperature(Tstg):55 to +150 °C.
Parameters: | Technical/Catalog Information | 2SK2315TYTR |
| Vendor | Renesas Technology America |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 2A |
| Rds On (Max) @ Id, Vgs | 450 mOhm @ 1A, 4V |
| Input Capacitance (Ciss) @ Vds | 173pF @ 10V |
| Power - Max | 1W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | UPAK |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | 2SK2315TYTR
2SK2315TYTR
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2SK2315TYTR Data Sheet
