MOSFET MOSFET N-Ch 60V 60A Rdson=0.011Ohm
2SK2313(F): MOSFET MOSFET N-Ch 60V 60A Rdson=0.011Ohm
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 60 A | ||
Resistance Drain-Source RDS (on) : | 0.011 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-3P | Packaging : | Bulk |
Technical/Catalog Information | 2SK2313(F) |
Vendor | Toshiba |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 60A |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 30A, 10V |
Input Capacitance (Ciss) @ Vds | 5400pF @ 10V |
Power - Max | 150W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 170nC @ 10V |
Package / Case | 2-16C1B (TO-247 N) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2SK2313 F 2SK2313F |