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2SK2313(F)

MOSFET MOSFET N-Ch 60V 60A Rdson=0.011Ohm

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SeekIC No. : 00159609 Detail

2SK2313(F): MOSFET MOSFET N-Ch 60V 60A Rdson=0.011Ohm

2SK2313(F) Data Sheet

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Part Number:
2SK2313(F)
Mfg:
Toshiba
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.011 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 60 A
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.011 Ohms


Parameters:

Technical/Catalog Information2SK2313(F)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs11 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 5400pF @ 10V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / Case2-16C1B (TO-247 N)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SK2313 F
2SK2313F



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