2SK2313

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25° C: 60A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 170nC @ 10V
Power - Max: 150W
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-3P-3, SC-65-3
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds: 5400pF @ 10V


Features:






Specifications






Description

      The 2SK2313 is a Silicon N Channel MOS Type designed for chopper regulator,DC-Dc converter and motor drive applicaitons.The 2SK2313 has 5 features including 4V gate drive;low drain-source on resistance:RDS(ON)=36m(typ) ;high forward transfer admittance:|Yfs|=40S(Typ);low leakage current: IDSS = 100 A (max) (VDS = 60 V);enhancement-mode: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA).
      The absolute maximun ratings of the 2SK2313 are at Ta=25°C, Drain-source voltage VDSS is 60V;drain-gate voltage(RGS=20k) is 60V;Gate-source voltage VGSS is ±20V;drain Current ID(DC) is 60A;drain power dissipation is 150W;channel temperature is 150°C maxnimum;Storage temperature is -55 to +150°C.
      Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
      The TOSHIBA products listed in this document are intended for usage in general electronics applications(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk.
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Parameters:

Technical/Catalog Information	2SK2313
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	11 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	5400pF @ 10V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	170nC @ 10V
Package / Case	2-16C1B (TO-247 N)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SK2313 2SK2313