2SK2312

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25° C: 45A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 110nC @ 10V
Package / Case: TO-220-3 Full Pack
Vgs(th) (Max) @ Id: 2V @ 1mA
Power - Max: 45W
Manufacturer: Toshiba
Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V
Supplier Device Package: TO-220NIS
Input Capacitance (Ciss) @ Vds: 3350pF @ 10V


Features:






Specifications






Description

      The 2SK2312 is a Silicon N Channel MOS FET designed for High speed,high current switching applications and chopper regulator,DC-Dc converter and motor drive applicaitons.The 2SK2312 has 5 features including 4V gate drive;low drain-source on resistance:RDS(ON)=36m(typ) ;high forward transfer admittance:|Yfs|=40S(Typ);low leakage current;enhancement-mode.
      The absolute maximun ratings of the 2SK2312 are at Ta=25°C, Drain-source voltage VDSS is 60V;drain-gate voltage(RGS=20k) is 60V;Gate-source voltage VGSS is ±20V;drain Current ID(DC) is 45A;drain power dissipation is 45W;channel temperature is 150°C maxnimum;Storage temperature is -55 to +150°C.
      The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.   
      No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.
      Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 
      At present there is not too much information about this model.If you are willing to find more  about 2SK2312, please pay attention to our web! We will promptly update the relevant information.

Parameters:

Technical/Catalog Information	2SK2312
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	45A
Rds On (Max) @ Id, Vgs	17 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	3350pF @ 10V
Power - Max	45W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	2-10R1B
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SK2312 2SK2312