2SK2274

DescriptionThe 2SK2274 is a kind of field effect transistor. It is silicon N channel MOS type. The device is designed for high speed, high current switching applications and chopper regulator, DC-DC converter and motor drive applications. There are some features as follows: (1)low drain-source ON ...

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SeekIC No. : 004226045 Detail

2SK2274: DescriptionThe 2SK2274 is a kind of field effect transistor. It is silicon N channel MOS type. The device is designed for high speed, high current switching applications and chopper regulator, DC-DC...

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Part Number:
2SK2274
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/22

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Product Details

Description



Description

The 2SK2274 is a kind of field effect transistor. It is silicon N channel MOS type. The device is designed for high speed, high current switching applications and chopper regulator, DC-DC converter and motor drive applications. There are some features as follows: (1)low drain-source ON resistance: RDS(ON)=1.5 (typ); (2)high forward transfer admittance: |Yfs|=2.5 S (typ); (3)low leakage current: IDSS=300A (max) (VDS=640 V); (4)enhancement-mode: Vth=1.5 to 3.5 V (VDS=10 V, ID=1 mA).

What comes next is the maximum ratings of 2SK2274(Ta=25): (1)drain-source voltage, VDSS: 700 V; (2)drain-gate voltage (RGS=20 k), VDGR: 700 V; (3)gate-source voltage, VGSS: ±30 V; (4)drain current, ID: 5 A when DC and 15 A when pulse; (5)drain power dissipation (Tc=25), PD: 45 W; (6)channel temperature, Tch: 150; (7)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SK2274(Ta=25): (1)gate leakage current, IGSS: ±100 nA at VGS=±30 V, VDS=0 V; (2)drain cut-off current, IDSS: 300A max at VDS=640 V, VGS=0 V; (3)drain-source breakdown voltage, V(BR)DSS: 700 V min at ID=10 mA, VGS=0 V; (4)gate threshold voltage, Vth: 1.5 V min and 3.5 V max at VDS=10 V, ID=1 mA; (5)drain-source ON resistance, RDS(ON): 1.5 typ and 1.7 max at ID=2 A, VGS=10 V; (6)forward transfer admittance, |Yfs|: 1.0 S min and 2.5 S typ at VDS=10 V, ID=30 A; (7)input capacitance, Ciss: 610 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (8)reverse transfer capacitance, Crss: 60 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (9)output capacitance, Coss: 110 pF typ at VDS=10 V, VGS=0 V, f=1 MHz.




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