2SK2267

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25° C: 60A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 170nC @ 10V
Power - Max: 150W
Vgs(th) (Max) @ Id: 2V @ 1mA
Manufacturer: Toshiba
Rds On (Max) @ Id, Vgs: 11 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds: 5400pF @ 10V
Package / Case: TO-3PL
Supplier Device Package: TO-3P(L)


Description

The 2SK2267 is a kind of field effect transistor. It is silicon N channel MOS type. The device is designed for high speed, high current switching applications and chopper regulator, DC-DC converter and motor drive applications. There are some features as follows: (1)low drain-source ON resistance: RDS(ON)=8 m (typ); (2)high forward transfer admittance: |Yfs|=60 S (typ); (3)low leakage current: IDSS=100A (max) (VDS=60 V); (4)enhancement-mode: Vth=0.8 to 2.0 V (VDS=10 V, ID=1 mA); (5)4 V gate drive.

What comes next is the maximum ratings of 2SK2267(Ta=25): (1)drain-source voltage, VDSS: 60 V; (2)drain-gate voltage (RGS=20 k), VDGR: 60 V; (3)gate-source voltage, VGSS: ±20 V; (4)drain current, ID: 60 A when DC and 240 A when pulse; (5)drain power dissipation (Tc=25), PD: 150 W; (6)single pulse avalanche energy, EAS: 1054 mJ; (7)avalanche current, IAR: 60 A; (8)repetitive avalanche energy, EAR: 15 mJ; (9)channel temperature, Tch: 150; (10)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SK2267(Ta=25): (1)gate leakage current, IGSS: ±100 A at VGS=±16 V, VDS=0 V; (2)drain cut-off current, IDSS: 100A max at VDS=60 V, VGS=0 V; (3)drain-source breakdown voltage, V(BR)DSS: 60 V min at ID=10 mA, VGS=0 V; (4)gate threshold voltage, Vth: 0.8 V min and 2.0 V max at VDS=10 V, ID=1 mA; (5)drain-source ON resistance, RDS(ON): 12 m typ and 15 m max at ID=30 A, VGS=4 V; 8 m typ and 11 m max at ID=30 A, VGS=4 V; (6)forward transfer admittance, |Yfs|: 40 S min and 60 S typ at VDS=10 V, ID=30 A; (7)input capacitance, Ciss: 5400 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (8)reverse transfer capacitance, Crss: 920 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (9)output capacitance, Coss: 2600 pF typ at VDS=10 V, VGS=0 V, f=1 MHz.

Parameters:

Technical/Catalog Information	2SK2267
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	11 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	5400pF @ 10V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	170nC @ 10V
Package / Case	TO-3P(L) (2-21F1B)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SK2267 2SK2267