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2SK2266

Application4-V gate drive Low drain−source ON resistance : RDS (ON) = 22 m (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symb...

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2SK2266: Application4-V gate drive Low drain−source ON resistance : RDS (ON) = 22 m (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) E...

2SK2266 Data Sheet

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Part Number:
2SK2266
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Product Details

Description



Application

 4-V gate drive
Low drain−source ON resistance : RDS (ON) = 22 m (typ.)
High forward transfer admittance : |Yfs| = 27 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 60 V)
Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Drain−gate voltage (RGS = 20 k)
VDGR
60
V
Gate−source voltage
VGSS
±20
V
Drain current DC (Note 1)
ID
45
A
Pulse (Note 1)
IDP
180
Drain power dissipation (Tc = 25)
PD
65
W
Single pulse avalanche energy
(Note 2)
EAS
246
mJ
Avalanche current
IAR
45
A
Repetitive avalanche energy (Note 3)
EAR
6.5
mJ
Channel temperature
Tch
150
Storage temperature range
TSTG
-55 ~ 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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