Features: SpecificationsDescription 2SK2237 is a kind of silicon N channel MOS type.It is widely used in the field of high speed,high switching,chopper regulator,DC-DC converter and motor drive applications.There are four features.First,it has low drain-source on resistance:RDS(ON)=0.6 (Typ.).Seco...
2SK2237: Features: SpecificationsDescription 2SK2237 is a kind of silicon N channel MOS type.It is widely used in the field of high speed,high switching,chopper regulator,DC-DC converter and motor drive appl...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
2SK2237 is a kind of silicon N channel MOS type.It is widely used in the field of high speed,high switching,chopper regulator,DC-DC converter and motor drive applications.There are four features.First,it has low drain-source on resistance:RDS(ON)=0.6 (Typ.).Secondly,it has high forward transfer admittance:Yfs=5.5s(Typ.).Thirdly,it has low leakage current:IDDS=100A(Max.)(VDS=500V).Fourthly,the enhancement is Vth=2.0~4.0V(VDS=10V,ID=1mA).
What comes next is the maximum ratings of 2SK2237.The VDSS (drain-source voltage) is 500 V.The VDGR (drain-gate voltage) is 500 V at RSS=20k.The VGSS (gate-source voltage) is ±30 V.The ID (drain current of DC) is 7A and the IDP (drain current of pulse) is 28A.The PD (drain power dissipation) is 45W at Tc=45.The Tch (channel temperature) is 150 and the Tstg (storage temperature) is from -55 to 150.Then is about the thermal characteristics.The maximum Pth(ch-c) (thermal resistance,channel to case) is 2.77/W and the maximum Pth(ch-a) (thermal resistance,channel to ambient) is 62.5/W.
The following is the electrical characteristics of 2SK2237.The maximum IGSS (gate leakage current) is ±10 A at VGS=±25v,VDS=0V.The minimum V(BR)GSS (gate-source breakdown voltage) is ±30V at IG=±100A,VDS=0V.The maximum IDSS (drian cut-off current) is 100A at VDS=500V,VGS=0V.The minimum V(BR)DSS (drain-source breakdown voltage) is 500V at ID=10mA,VGS=0V.The minimum Vth (gate threshold voltage) is 2.0V and the maximum is 4.0V at VDS=10V,ID=1mA.The typical RDS(ON) (drain-source on resistance) is 0.6 and the maximum is 0.8 at VGS=10V,ID=4A.The minimum /Yfs/(forward transfer admittance) is 3.0S and the typical is 5.5S at VDS=10V,ID=4A.Following the condition that VDS=10V,VGS=0V,F=1MHz,the typical Ciss (input capacitance) is 1300pf,the typical Crss (reverse transfer capacitance) is 80pf and the typical Coss (output capacitance) is 360pf.Under the condition that the VDD=400V,VGS=10V,ID=7A,the typical Qg (total gate charge (gate-source plus gate-drain)) is 30 nC,the typical Qgs (gate-source charge) is 18 nC and the typical Qgd ( gate-drain charge) is 12 nC.