Position: Home  > All Categories> Integrated Circuits (ICs) > 2SK2221-E

2SK2221-E

MOSFET N-CH 200V 8A TO-3P

product image

2SK2221-E Picture
See larger image
SeekIC No. : 003433752 Detail

2SK2221-E: MOSFET N-CH 200V 8A TO-3P

2SK2221-E Data Sheet

floor Price/Ceiling Price

US $ 5.91~5.91 / Piece | Get Latest Price
Part Number:
2SK2221-E
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • Unit Price
  • $5.91
  • Processing time
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 8A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: - DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 600pF @ 10V
Power - Max: 100W Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 8A
Drain to Source Voltage (Vdss): 200V
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 100W
Manufacturer: Renesas Electronics America
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Input Capacitance (Ciss) @ Vds: 600pF @ 10V


Parameters:

Technical/Catalog Information2SK2221-E
VendorRenesas Technology America
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs-
Input Capacitance (Ciss) @ Vds 600pF @ 10V
Power - Max100W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SK2221 E
2SK2221E



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Cable Assemblies
CS1W-CN114
XW2Z-500T
Optical Inspection Equipment
AA924
A21K4B
Circuit Protection
A50QS75-4Y
F-17*77
Crystals and Oscillators
WT325BI0030.000000
2SB49
Connectors, Interconnects
ASP-134488-01
WM4078-ND
View more