Features: • Low onresistance• High speed switching• Low drive current• 4 V gate drive device can be driven from 5 V cource• Suitable for Switching regulator, DC DC converterApplication·High speed power switchingSpecifications Item Symbol Ratings Unit Drain...
2SK2203: Features: • Low onresistance• High speed switching• Low drive current• 4 V gate drive device can be driven from 5 V cource• Suitable for Switching regulator, DC DC con...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSX | 60 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | 50 | A |
Drain peak current | ID(pulse)* | 200 | A |
Bodydrain diode reverse drain current | IDR | 50 | A |
Avalanche current | IAP*** | 50 | A |
Avalanche energy | EAR*** | 214 | mJ |
Channel dissipation | Pch** | 60 | W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |