2SK2173

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25° C: 50A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 125W
Gate Charge (Qg) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-3P-3, SC-65-3
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)
Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds: 3550pF @ 10V


Application

 4-V gate drive
Low drain−source ON resistance : R_{DS (ON)} = 13 m (typ.)
High forward transfer admittance : |Y_fs| = 40 S (typ.)
Low leakage current : I_DSS = 100 A (max) (V_DS = 60 V)
Enhancement mode : V_th = 0.8~2.0 V (V_DS = 10 V, I_D = 1 mA)


Specifications

Characteristics		Symbol	Rating	Unit
Drain-source voltage		VDSS	60	V
Drain−gate voltage (RGS = 20 k)		VDGR	60	V
Gate−source voltage		VGSS	±20	V
Drain current	DC (Note 1)	ID	50	A
	Pulse (Note 1)	IDP	200	A
Drain power dissipation (Tc = 25)		PD	125	W
Single pulse avalanche energy (Note 2)		EAS	683	mJ
Avalanche current		IAR	50	A
Repetitive avalanche energy (Note 3)		EAR	12.5	mJ
Channel temperature		Tch	150
Storage temperature range		TSTG	-55 ~ +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Parameters:

Technical/Catalog Information	2SK2173
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	17 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	3550pF @ 10V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	2-16C1B (TO-247 N)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SK2173 2SK2173