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2SK2162

Application• High breakdown voltage: VDSS = 180 V• High forward transfer admittance: |Yfs| = 0.7 S (typ.)• Complementary to 2SJ338Specifications Characteristic Symbol Rating Unit Drain-source voltage VDSS 180 V Gate-source voltage VGSS ±20 V Drain current (...

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2SK2162: Application• High breakdown voltage: VDSS = 180 V• High forward transfer admittance: |Yfs| = 0.7 S (typ.)• Complementary to 2SJ338Specifications Characteristic Symbol Rating...

2SK2162 Data Sheet

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Part Number:
2SK2162
Supply Ability:
5000

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  • 1~5000
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Upload time: 2024/11/21

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Product Details

Description



Application

• High breakdown voltage: VDSS = 180 V
• High forward transfer admittance: |Yfs| = 0.7 S (typ.)
• Complementary to 2SJ338


Specifications

Characteristic Symbol Rating Unit
Drain-source voltage VDSS 180 V
Gate-source voltage VGSS ±20 V
Drain current (Note 1) ID 1 A
Power dissipation (Tc = 25) PD 20 W
Channel temperature Tch 150
Storage temperature range Tstg −55~150

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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