2SK216

This is the description about 2SK214 and 2SK215 and 2SK216 of the silicon N channel MOS FET, high frequency and low frequency power amplifier, high speed switching complementary pair with 2sj76, j77, j78, j79.

When test conditions are @ 25, the following data is available. Pulse voltage is 3.2 Volts. Rise time is 3.0 ns (10%-90%). Pulse width is 1.2 x total delay. Pulse period is 4 x pulse width. Supply current is 35 mA typical. Supply voltage is 5.0 Volts.

Here are the features of 2SK216. (1 ) Suitable for direct mounting; (2 )High forward transfer admittance; (3 )Excellent frequency response; (4 )Enhancement-mode.

The electrical characteristics and absolute maximum ratings of 2SK216 are these. Gate to source voltage VGSS is ±15 V. Drain current ID is 500 mA. Body to drain diode reverse drain current IDR is 500 mA. Channel dissipation Pch is 1.75 W. Channel dissipation Pch*1 is 30 W. Channel temperature Tch is 150 °C. Storage temperature Tstg is from 45 to +150 °C. Gate to source breakdown voltage is ±15 V. Gate to source voltage is from 0.2 to1.5 V. Drain to source saturation voltage is 2.0 V. Forward transfer admittance is 20 mS. Input capacitance is 90 pF. Reverse transfer capacitance is 2.2 pF.

These are the notes: For some grades, production may be terminated. Please contact the renesas sales office to check the state of production before ordering the product..

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