2SK2158-T2B

The 2SK2158-T2B is designed as one kind of N-channel vertical type MOS FET device that can be driven on a low voltage and it is not necessary to consider driving current, so this device is suitable for use in low-voltage portable systems such as headphone stereo sets and camcorders.

Features of the 2SK2158-T2B are:(1)Capable of drive gate with 1.5 V; (2)Because of high input impedance, there is no need to consider driving current; (3)Bias resistance can be omitted, enabling reduction in total number of parts. The absolute maximum ratings of the 2SK2158-T2B can be summarized as:(1)Drain to Source Voltage: 50 V;(2)Gate to Source Voltage: ±7.0 V;(3)Drain Current (DC): ±0.1 A;(4)Drain Current (pulse): ±0.2 A;(5)Total Power Dissipation: 200 mW;(6)Channel Temperature: 150 °C;(7)Storage Temperature:55 to +150 °C.

The electrical characteristics of this device can be summarized as:(1)Drain Cut-off Current: 1.0 uA;(2)Gate Leakage Current: ±3.0 uA;(3)Gate Cut-off Voltage: 0.5 to 1.1 V;(4)Forward Transfer Admittance: 20 mS;(5)Input Capacitance: 6 pF;(6)Output Capacitance: 8 pF;(7)Reverse Transfer Capacitance: 1 pF;(8)Turn-On Delay Time: 9 ns.etc. If you want to know more information about the 2SK2158-T2B, please download the datasheet in www.seekic.com or www.chinaicmart.com .