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2SK2145

Application• Including two devices in SM5 (super mini type with 5 leads.)• High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0• High breakdown voltage: VGDS = −50 V• Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, Rg = 1 k• High input imp...

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SeekIC No. : 004225953 Detail

2SK2145: Application• Including two devices in SM5 (super mini type with 5 leads.)• High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0• High breakdown voltage: VGDS = −50 V•...

2SK2145 Data Sheet

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Part Number:
2SK2145
Supply Ability:
5000

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Upload time: 2024/11/24

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Product Details

Description



Application

• Including two devices in SM5 (super mini type with 5 leads.)
• High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0
• High breakdown voltage: VGDS = −50 V
• Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, Rg = 1 k
• High input impedance: IGSS = −1 nA (max) at VGS = −30 V


Specifications

Characteristics Symbol Rating Unit
Gate-drain voltage VGDS −50 V
Gate current IG 10 mA
Drain power dissipation PD    (Note 1) 300 mW
Junction temperature Tj 125
Storage temperature Tstg −55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating




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