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2SK2140

Features: • Low On-state Resistance - RDS(on) = 1.5 MAX. (VGS = 10 V, ID = 3.5 A)• Low Ciss Ciss = 930 pF TYP.• High Avalanche Capability RatingsSpecifications Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±7.0 ...

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2SK2140: Features: • Low On-state Resistance - RDS(on) = 1.5 MAX. (VGS = 10 V, ID = 3.5 A)• Low Ciss Ciss = 930 pF TYP.• High Avalanche Capability RatingsSpecifications Drain to Sourc...

2SK2140 Data Sheet

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Part Number:
2SK2140
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low On-state Resistance
  -  RDS(on) = 1.5 MAX. (VGS = 10 V, ID = 3.5 A)
• Low Ciss Ciss = 930 pF TYP.
• High Avalanche Capability Ratings


Specifications

Drain to Source Voltage VDSS 600 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID(DC) ±7.0 A
Drain Current (Pulse) Note1 ID(pulse) ±28 A
Total Power Dissipation(Tc= 25°C) PT1 75 W
Total Power Dissipation(TA= 25°C) PT2 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche CurrentNote2 IAS 7.0 A
Single Avalanche EnergyNote2 EAS 16.3 mJ

Notes 1. PW 10 s, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V




Description

The 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications.




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