PinoutDescriptionThe 2SK211-GR is designed as one kind of TOSHIBA field effect transistor that can be used in FM tuner and VHF band amplifier applications. Features of this device are:(1)Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz); (2)High forward transfer admitance: |Yfs| = 9 mS (typ.); (3)...
2SK211-GR: PinoutDescriptionThe 2SK211-GR is designed as one kind of TOSHIBA field effect transistor that can be used in FM tuner and VHF band amplifier applications. Features of this device are:(1)Low noise f...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
The 2SK211-GR is designed as one kind of TOSHIBA field effect transistor that can be used in FM tuner and VHF band amplifier applications. Features of this device are:(1)Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz); (2)High forward transfer admitance: |Yfs| = 9 mS (typ.); (3)Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.). The absolute maximum ratings of the 2SK211-GR can be summarized as:(1)Gate-drain voltage: -18 V;(2)Gate current: 10 mA;(3)Drain power dissipation: 150 mW;(4)Junction temperature: 125 °C;(5)Storage temperature range: -55 to 125 °C.
The electrical characteristics of this device can be summarized as:(1)Gate leakage current: -10 nA;(2)Gate-drain breakdown voltage: -18 V;(3)Drain current: 1.0 to 10 mA;(4)Gate-source cut-off voltage: -0.4 to -4.0 V;(5)Forward transfer admittance: 9 ms;(6)Input capacitance: 6.0 pF;(7)Reverse transfer capacitance: 0.15 pF;(8)Power gain: 18 dB;(9)Noise figure: 2.5 to 3.5 dB. If you want to know more information about the 2SK211-GR, please download the datasheet in www.seekic.com or www.chinaicmart.com .