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2SK2109

Features: • Low ON resistance R DS(on) = 1.0 MAX. @VGS = 4.0 V, ID = 0.3 A• High switching speed ton + toff < 100 ns• Low parasitic capacitanceSpecifications PARAMETER SYMBOL TEST CONDITIONS RATING UNIT Drain to Source Voltage VDSS VGS = 0 60 V G...

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SeekIC No. : 004225916 Detail

2SK2109: Features: • Low ON resistance R DS(on) = 1.0 MAX. @VGS = 4.0 V, ID = 0.3 A• High switching speed ton + toff < 100 ns• Low parasitic capacitanceSpecifications PARAMETER S...

2SK2109 Data Sheet

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Part Number:
2SK2109
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• Low ON resistance
    R DS(on) = 1.0 MAX. @VGS = 4.0 V, ID = 0.3 A
• High switching speed
   ton + toff < 100 ns
• Low parasitic capacitance


Specifications

PARAMETER
SYMBOL
 TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
 VGS = 0
60
V
Gate to Source Voltage
VGSS
 VDS = 0
±20
V
Drain Current (DC)
I D(DC)
±0.5
A
Drain Current (Pulse)
I D(pulse)
 PW 10 ms
Duty cycle 50 %
±1.0
A
Total Power Dissipation
PT
 16 cm2 * 0.7 mm, ceramic substrate used
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C



Description

The 2SK2109 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V.

2SK2109 has a low ON resistance and superb switching characteristics and is ideal for driving the actuator, such as motors and DC/DC converters.




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