MOSFET N-CH 30V 2A
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2 A |
Resistance Drain-Source RDS (on) : | 0.4 Ohms | Configuration : | Single |
Mounting Style : | Through Hole | Package / Case : | MPT3 |
Packaging : | Reel |
Technical/Catalog Information | 2SK2103T100 |
Vendor | Rohm Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 2A |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 1A, 10V |
Input Capacitance (Ciss) @ Vds | 230pF @ 10V |
Power - Max | 500mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | - |
Package / Case | SC-62, SOT-89, MPT3 (3 leads + Tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2SK2103T100 2SK2103T100 |