2SK2090 Selling Leads, Price trend, 2SK2090 DataSheet download, circuit diagram from SeekIC.com

Features: • Gate can be driven by 2.5 V• Because of its high input impedance, there's no need to consider drive currentSpecifications PARAMETER SYMBOL TEST CONDITIONS RATING UNIT Drain to Source Voltage VDSS VGS = 0 50 V Gate to Source Voltage VGSS VD...

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SeekIC No. : 004225905 Detail

2SK2090: Features: • Gate can be driven by 2.5 V• Because of its high input impedance, there's no need to consider drive currentSpecifications PARAMETER SYMBOL TEST CONDITIONS RATING ...

2SK2090 Data Sheet

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Part Number:: 2SK2090
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/2/15

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Recent History
What is this?

2SK2002-01MR evaluate
Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
2SK2003-01MR evaluate
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
2SK2007 evaluate
Features: • Low onresistance• High speed switching• Low drive current• No ...

Product Details

Description

Features:

• Gate can be driven by 2.5 V
• Because of its high input impedance, there's no need to consider drive current

Specifications

PARAMETER	SYMBOL	TEST CONDITIONS	RATING	UNIT
Drain to Source Voltage	V_DSS	VGS = 0	50	V
Gate to Source Voltage	V_GSS	VDS = 0	±7.0	V
Drain Current (DC)	I _D(DC)		±100	mA
Drain Current (Pulse)	I _D(pulse)	PW 10 ms Duty cycle 50 %	±200	mA
Total Power Dissipation	P_T		150	mW
Channel Temperature	T_ch		150	°C
Storage Temperature	T_stg		55 to +150	°C

Description

The 2SK2090 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.

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2SK2090

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