2SK2080-01R

The 2SK2080-01R is designed as one kind of N-channel silicon power MOSFET that can be used in (1)switching regulators;(2)UFS;(3)DC-DC converters;(4)general purpose power amplifier.

Features of the 2SK2080-01R are:(1)high speed switching;(2)low on-resistance;(3)no secondary breakdown;(4)low driving power;(5)high voltage;(6)VGE= +/- 30 V guarantee;(7)avalanche-proof.

The absolute maximum ratings of the 2SK2080-01R can be summarized as:(1)drain-source voltage: 500 V;(2)drain-gate voltage: 500 V;(3)continuous drain current: 15 A;(4)pulsed drain current: 40 A;(5)gate-source voltage: +/- 30 V;(6)max power dissipation: 80 W;(7)operating and storage temperature range: -55 to +150 . If you want to know more information such as the electrical characteristics about the 2SK2080-01R, please download the datasheet in www.seekic.com or www.chinaicmart.com .