2SK2080-01MR

The 2SK2080-01MR belongs to the FAP-A.It is a kind of N-channel silicon power MOS-FET.It can used in switching regulators,UPS,DC-DC converters and general purpose power amplifier.

The following is features of 2SK2080-01MR: (1) low on-resistance; (2) very high-speed switching; (3) no secondary breakdown; (4) low driving power; (4) high voltage; (5) avalanche-proof; (6) VCS is ±30 V guarantee.

What comes next is absolute maximum ratings of 2SK2080-01MR at TA is 25. (1): drain to source voltage(VDSS) is 600 V; (2): gate to source voltage(VGSS) is ±30 V; (3): drain to gate voltage(VDGR) is 600 V; (4):pulsed drain current is 32 A; (5): maximum power dissipation(PN) is 50 W; (6): operating temperature is 150 and storage temperature is from -55 to 150; (7): minimum drain to source breakdown voltage is 600 V at the comdition of IP is 1 mA and VGS is 0 V; (8): typical of gate threshold voltage is 3.0 V,minimum is 2.5 V and maximum is 3.5 V at IP is 1 mA and VPS is VGS; (9): typical of input capacitance is 1500 pF and maximum is 2200 pF when VDS is 25 V and VGS is 0 V.