2SK2053

The 2SK2053 is designed as one kind of N-channel MOS field effect transistor that can be used in high voltage switching applications. Features of this device are:(1)gate can be driven 1.5 V;(2)new package intermediate between small signal and power types;(3)low ON resistance: RDS(on)=0.4 max..

The absolute maximum ratings of the 2SK2053 can be summarized as:(1)drain to source voltage:16 V;(2)gate to source voltage:±7.0 V;(3)drain current (DC):±5.0 A;(4)drain current (pulse):±10.0 A;(5)total power dissipation (Tc=25 °C): 2 W;(6)total power dissipation (TA=25 °C): 2.0 W;(7)channel temperature: 150 °C;(8)storage temperature:55 to +150 °C.

And the electrical characteristics (TA=25 °C) of the 2SK2053 can be summarized as:(1)drain to source on-resistance: 0.19 or 0.08 or 0.06 ;(2)gate to source cutoff voltage:;0.5 V to 1.1 V(3)forward transfer admittance: 4 S;(4)drain cut-off current: 1.0 A;(5)gate to source leakage current: +/-3.0 A;(6)input capacitance: 730 pF;(7)output capacitance: 640 pF;(8)reverse transfer capacitance: 230 pF;(9)turn-on delay time: 85 ns;(10)rise time: 450 ns. If you want to know more information such as the electrical characteristics about this device, please download the datasheet in www.seekic.com or www.chinaicmart.com.