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2SK2037

Application• High input impedance.• Low gate threshold voltage: Vth = 0.5~1.5 V• Excellent switching times: ton = 0.28 s (typ.)toff = 0.34 s (typ.)• Small package.• Enhancement-modeSpecifications Characteristics Symbol Rating Unit Drain-source voltageGate-s...

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2SK2037: Application• High input impedance.• Low gate threshold voltage: Vth = 0.5~1.5 V• Excellent switching times: ton = 0.28 s (typ.)toff = 0.34 s (typ.)• Small package.• Enh...

2SK2037 Data Sheet

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Part Number:
2SK2037
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Application

• High input impedance.
• Low gate threshold voltage: Vth = 0.5~1.5 V
• Excellent switching times: ton = 0.28 s (typ.)
toff = 0.34 s (typ.)
• Small package.
• Enhancement-mode


Specifications

Characteristics Symbol Rating Unit
Drain-source voltage

Gate-source voltage

DC drain current		 VDS

VGSS

ID		 20

10

100		 V

V

mA
Drain power dissipation

Channel temperature

Storage temperature range		 PD

Tch

Tstg		 100

150

−55~150		 mW




Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note: This transistor is electrostatic sensitive device. Please handle with caution.




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