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2SK2036

Application• High input impedance.• Low gate threshold voltage: Vth = 0.5~1.5 V• Excellent switching times: ton = 0.28 s (typ.) toff = 0.34 s (typ.)• Small package• Enhancement-modeSpecifications Characteristics Symbol Rating Unit Drain-source voltage VDS ...

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2SK2036: Application• High input impedance.• Low gate threshold voltage: Vth = 0.5~1.5 V• Excellent switching times: ton = 0.28 s (typ.) toff = 0.34 s (typ.)• Small package• Enh...

2SK2036 Data Sheet

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Part Number:
2SK2036
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Application

• High input impedance.
• Low gate threshold voltage: Vth = 0.5~1.5 V
• Excellent switching times: ton = 0.28 s (typ.) toff = 0.34 s (typ.)
• Small package
• Enhancement-mode


Specifications

Characteristics Symbol Rating Unit
Drain-source voltage VDS 20 V
Gate-source voltage VGSS 10 V
Drain current ID 100 mA
Drain power dissipation PD 200 mW
Channel temperature Tch 150  
Storage temperature range Tstg −55~150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device. Please handle with caution.


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